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SUP/SUB85N10-10
Vishay Siliconix
N-Channel 100-V (D-S) 175 C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V) 100 rDS(on) () 0.0105 at VGS = 10 V 0.012 at VGS = 4.5 V ID (A) 85a
FEATURES
* TrenchFET(R) Power MOSFET * 175 C Maximum Junction Temperature
Available
RoHS*
COMPLIANT
TO-220AB
D
TO-263
G DRAIN connected to TAB G GDS Top View SUP85N10-10 DS S N-Channel MOSFET
Top View SUB85N10-10
ORDERING INFORMATION
Package TO-220AB TO-263 Tin/Lead Plated SUP85N10-10 SUB85N10-10 Lead (Pb)-free SUP85N10-10-E3 SUB85N10-10-E3
ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 C) Pulsed Drain Current Avalanche Current Single Pulse Avalanche Energyb TC = 25 C TC = 125 C L = 0.1 mH Symbol VDS VGS ID IDM IAS EAS PD TJ, Tstg Limit 100 20 85a 60a 240 75 280 250c 3.75 - 55 to 175 Unit V
A mJ W C
TC = 25 C (TO-220AB and TO-263) Maximum Power Dissipationb TA = 25 C (TO-263)d Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter Junction-to-Ambient Junction-to-Case Notes: a. Package limited. b. Duty cycle 1 %. c. See SOA curve fo voltage derating. d. When mounted on 1" square PCB (FR-4 material). * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 71141 S-61008-Rev. D, 12-Jun-06 www.vishay.com 1 PCB Mount (TO-263)d Free Air (TO-220AB) Symbol RthJA RthJC Limit 40 62.5 0.6 Unit C/W
SUP/SUB85N10-10
Vishay Siliconix
SPECIFICATIONS TJ = 25 C, unless otherwise noted
Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta V(BR)DSS VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 250 A VDS = 0 V, VGS = 20 V VDS = 100 V, VGS = 0 V VDS = 100 V, VGS = 0 V, TJ = 125 C VDS = 100 V, VGS = 0 V, TJ = 175 C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 30 A VGS = 4.5 V, ID = 20 A VGS = 10 V, ID = 30 A, TJ = 125 C VGS = 10 V, ID = 30 A, TJ = 175 C Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off DelayTimec Fall Timec gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 50 V, RL = 0.6 ID 85 A, VGEN = 10 V, Rg = 2.5 VDS = 50 V, VGS = 10 V, ID = 85 A VGS = 0 V, VDS = 25 V, f = 1 MHz VDS = 15 V, ID = 30 A 25 6550 665 265 105 17 23 12 90 55 130 25 135 85 195 85 240 IF = 85 A, VGS = 0 V IF = 50 A, di/dt = 100 A/s 1.0 85 4.5 0.17 1.5 140 7 0.35 ns 160 nC pF 120 0.0085 0.010 0.0105 0.0012 0.017 0.022 S 100 1 3 100 1 50 250 A A V nA Symbol Test Conditions Min Typ Max Unit
Drain-Source On-State Resistancea
rDS(on)
Source-Drain Diode Ratings and Characteristics (TC = 25 C)b IS Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge ISM VSD trr IRM(REC) Qrr
A V ns A C
Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
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Document Number: 71141 S-61008-Rev. D, 12-Jun-06
SUP/SUB85N10-10
Vishay Siliconix
TYPICAL CHARACTERISTICS
250 VGS = 10 thru 6 V 200 I D - Drain Current (A) 5V I D - Drain Current (A) 150
TA = 25 C, unless otherwise noted
200
150
100
100
50
4V
50
TC = 125 C 25 C
3V 0 0 2 4 6 8 10 0 0 1 2 3 4
- 55 C 5 6
VDS - Drain-to-Source Voltage (V)
VGS- Gate-to-Source Voltage (V)
Output Characteristics
250 TC = - 55 C r DS(on) - On-Resistance () 200 g fs - Transconductance (S) 25 C 150 125 C 100 0.015 0.020
Transfer Characteristics
VGS = 4.5 V 0.010 VGS = 10 V
0.005
50
0 0 20 40 60 80 100
0.000 0 20 40 60 80 100 120
ID - Drain Current (A)
ID - Drain Current (A)
Transconductance
10000 20
On-Resistance vs. Drain Current
8000 C - Capacitance (pF) Ciss 6000
V GS - Gate-to-Source Voltage (V)
16
VDS = 50 V ID = 85 A
12
4000
8
2000
Crss
4
Coss
0 0 15 30 45 60 75
0 0 50 100 150 200
VDS - Drain-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
Capacitance
Gate Charge
Document Number: 71141 S-61008-Rev. D, 12-Jun-06
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SUP/SUB85N10-10
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 C, unless otherwise noted
2.5 VGS = 10 V ID = 30 A 2.0 rDS(on) - On-Resistance (Normalized) I S - Source Current (A) 100
1.5
TJ = 150 C 10
TJ = 25 C
1.0
0.5
0.0 - 50 - 25
0
25
50
75
100
125
150
175
1 0
0.3
0.6
0.9
1.2
TJ - Junction Temperature (C)
VSD- Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
1000 140
Source-Drain Diode Forward Voltage
130 100 IAV (A) at T A = 25 C I Dav (a) 10 IAV (A) at T A = 150 C 1 V BR)DSS (V) ( 120
ID = 250 A
110
100
0.1 0.00001 0.0001 0.001 0.01 0.1 1
90 - 50
- 25
0
25
50
75
100
125
150
175
tin (Sec)
TJ - Junction Temperature (C)
Avalanche Current vs. Time
TJ - Drain-Source Breakdown vs. Junction-Temperature
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Document Number: 71141 S-61008-Rev. D, 12-Jun-06
SUP/SUB85N10-10
Vishay Siliconix
THERMAL RATINGS
100 1000
80 I D - Drain Current (A) I D - Drain Current (A)
10 s 100 100 s 10 *Limited by rDS(on)
60
1 ms 10 ms 100 ms dc
40
20
1
TC = 25 C Single Pulse
0 0 25 50 75 100 125 150 175
0.1 0.1 100 1 10 1000 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified *VGS
TC - Ambient Temperature (C)
Maximum Avalanche and Drain Current vs. Case Temterature
2 1 Normalized Effective Transient Thermal Impedance
Safe Operating Area
Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02 Single Pulse
0.01 10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71141.
Document Number: 71141 S-61008-Rev. D, 12-Jun-06
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Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000 Revision: 08-Apr-05
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